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DATA SHEET
ESD NOISE CLIPPING DIODES
NNCD5.6LG to NNCD6.8LG
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (QUARTO TYPE: COMMON ANODE) 5-PIN MINI MOLD
This product series is a low capacitance type diode developed for ESD (Electrostatic Discharge) absorption. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 8 kV, and capacitance is small with 10 pF between the terminal. This product series is the most suitable for the ESD absorption in the high-speed data
PACKAGE DIMENSIONS
(in millimeters)
2.8 0.2 1.5 0.65 -0.15
+0.1
2.9 0.2
that product can cope with high density assembling.
0.95
With four elements mounted in the 5Pin Mini Mold Package,
2
3
4
0.16 -0.06
FEATURES
4-2), the product assures the minimum endurance of 8 kV. * Capacitance is small with 10 pF (at VR = 0 V, f = 1 MHz) between the terminal. characteristic. * With 4 elements mounted (common anode) in the 5-pin mini mold package, that product can cope with high density assembling. It is excellent in the frequency
1.1 to 1.4
+0.1
* Based on the electrostatic discharge immunity test (IEC10000.8
(5-pin mini mold)
PIN CONNECTION APPLICATIONS
* External interface circuit ESD absorption in the high-speed data communication bus such as USB.
5 4 1: 2: 3: 4: 5: K1 A K2 K3 K4 Cathode 1 Anode (Common) Cathode 2 Cathode3 Cathode4
1
2
3
MAXIMUM RATINGS (TA = 25C)
Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P PRSM Tj Tstg 200 mW 2W (t = 10 s, 1 pulse) 150C -55C to +150C (Total) Fig.5
Document No. D12785EJ1V0DS00 (1st edition) Date Published October 1998 N CP(K) Printed in Japan
0 to 0.1
(c)
0.32 -0.06
+0.1
communication bus such as USB.
0.95
1
5
1998
NNCD5.6LG to NNCD6.8LG
ELECTRICAL CHARACTERISTICS (TA = 25C) (A-K1, A-K2, A-K3, A-K4)
Breakdown VoltageNote 1 Type No VBR (V) MIN. NNCD5.6LG NNCD6.2LG NNCD6.8LG 5.3 5.7 6.2 MAX. 6.3 6.7 7.1 IT (mA) 5 5 5 DynamicNote 2 Impedance Zz () MAX. 80 50 30 IT (mA) 5 5 5 Reverse Leakage IR (A) MAX. 5 2 2 VR (V) 2.5 3.0 3.5 Capacitance Ct (pF) TYP. 10 8 7 Test Condition VR = 0 V f = 1 MHz ESD VoltageNote 3 (kV) MIN. 8 8 8 Test Condition C = 150 pF R = 330 Contact discharge
Notes 1. Tested with pulse (40 ms) 2. Zz is measured at IT given a small A.C. signal. 3. ESD voltage is measured based on the IEC1000-4-2 test on electromagnetic interference (EMI).
2
NNCD5.6LG to NNCD6.8LG
TYPICAL CHARACTERISTICS (TA = 25C)
Figure 1. P - TA RATING Figure 2. It - VBR CHARACTERISTICS (A - K1, A - K2, A - K3, A - K4)
250 200 10 m 150
IT - On state Current - A
P - Power Dissipation - mW
NNCD5.6LG NNCD6.2LG NNCD6.8LG
100 50 0 0 100 125 25 50 75 TA - Ambient Temperature - C 150
1m
100
10
1
100 n
10 n 4 5 6 7 8 VBR - Breakdown Voltage - V
Figure 3. Ct - VR CHARACTERISTICS
10.0 Ct - Capacitance between the terminal - pF f = 1 MHz
8.0 NNCD5.6LG NNCD6.2LG NNCD6.8LG
6.0
4.0
0.1
1.0 VR - Reverse Voltage - V
10
3
NNCD5.6LG to NNCD6.8LG
Figure 4. TRANSIENT THERMAL IMPEDANCE
1000 625C/W
Zth - Transient Thermal Impedance - (C/W)
NNCD [ ] LG 100
10
1
0.1 1m
10 m
100 m t - Time - s
1
10
100
Figure 5. SURGE REVERSE POWER RATING
1000
TA = 25C Nom - Repetive
PRSM
PRSM - Surge Reverse Power - W
tT
100
10
NNCD [ ] LG 1
0.1 1
10
100
1m
10 m
100 m
tT - Pulse Width - s
4
NNCD5.6LG to NNCD6.8LG
REFERENCE
Document NEC semiconductor device reliability/quality control system NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor device Semiconductor device mounting technology manual Document No. C11745E MEI - 1201 C11531E C10535E
5
NNCD5.6LG to NNCD6.8LG
[MEMO]
6
NNCD5.6LG to NNCD6.8LG
[MEMO]
7
NNCD5.6LG to NNCD6.8LG
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5

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